Toshiba SSM6K403TU Type N-Channel Field Effect Transistor, 4.2 A, 20 V Enhancement, 6-Pin UF6 SSM6K403TU

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Subtotal (1 pack of 25 units)*

R 164,325

(exc. VAT)

R 188,975

(inc. VAT)

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Last RS stock
  • Final 1,400 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
25 - 75R 6.573R 164.33
100 - 475R 6.409R 160.23
500 - 975R 6.216R 155.40
1000 +R 5.968R 149.20

*price indicative

Packaging Options:
RS stock no.:
171-2490
Mfr. Part No.:
SSM6K403TU
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

Field Effect Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

4.2A

Maximum Drain Source Voltage Vds

20V

Series

SSM6K403TU

Package Type

UF6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

66mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±10 V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

16.8nC

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.7mm

Length

1.7mm

Width

2 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
TH
1.5V drive

Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)

Ron = 43mΩ (max) (@VGS = 1.8V)

Ron = 32mΩ (max) (@VGS = 2.5V)

Ron = 28mΩ (max) (@VGS = 4.0V)

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