Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK

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Subtotal 125 units (supplied on a continuous strip)*

R 1 608,125

(exc. VAT)

R 1 849,375

(inc. VAT)

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Units
Per unit
125 - 225R 12.865
250 - 600R 12.479
625 - 1225R 11.98
1250 +R 11.501

*price indicative

Packaging Options:
RS stock no.:
170-5335P
Mfr. Part No.:
BUK9Y19-55B,115
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

184A

Maximum Drain Source Voltage Vds

55V

Series

BUK9Y19

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

85W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

15 V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

175°C

Height

1.05mm

Length

5mm

Standards/Approvals

No

Width

4.1 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.

low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids