Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON

RS stock no.:: 170-2300
Mfr. Part No.:: BSZ097N10NS5ATMA1
Manufacturer:: Infineon

Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON

Image representative of range

Bulk discount available

Subtotal (1 reel of 5000 units)*

R 57 830,00

(exc. VAT)

R 66 505,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 03 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 - 5000	R 11.566	R 57,830.00
10000 +	R 11.277	R 56,385.00

*price indicative

RS stock no.:: 170-2300
Mfr. Part No.:: BSZ097N10NS5ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Series	BSZ097N10NS5
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	69W
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Standards/Approvals	No
	Height	1.1mm
	Width	3.4 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Series BSZ097N10NS5
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 69W
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Standards/Approvals No
	Height 1.1mm
	Width 3.4 mm
	Automotive Standard No

OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Benefits:

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Target Applications:

Telecom

Server

Solar

Low voltage drives

Light electric vehicles

Adapter

Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON

FREE delivery for orders over R 1,500.00

Related links