Infineon Single IRF1407PbF 1 Type N-Channel MOSFET, 130 A, 75 V Enhancement, 3-Pin TO-220AB IRF1407PBF
- RS stock no.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
R 941,30
(exc. VAT)
R 1 082,50
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 18.826 | R 941.30 |
| 250 - 450 | R 18.356 | R 917.80 |
| 500 + | R 17.805 | R 890.25 |
*price indicative
- RS stock no.:
- 170-2243
- Mfr. Part No.:
- IRF1407PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220AB | |
| Series | IRF1407PbF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220AB | ||
Series IRF1407PbF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Height 16.51mm | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Target Applications:
Consumer Full-Bridge
Full-Bridge
Push-Pull
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