Infineon HEXFET Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

R 1 607,80

(exc. VAT)

R 1 848,95

(inc. VAT)

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Units
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Per Tube*
50 +R 32.156R 1,607.80

*price indicative

RS stock no.:
165-5783
Mfr. Part No.:
IRFI4410ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

81nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

16.13mm

Length

10.75mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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