N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK Infineon IRFS3806TRLPBF

RS stock no.:: 145-9494
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 43 A, 60 V, 3-Pin D2PAK Infineon IRFS3806TRLPBF

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Subtotal (1 reel of 800 units)**

R 8 800 80

(exc. VAT)

R 10 120 80

(inc. VAT)

800 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

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Units	Per unit	Per Reel**
800 +	R 11,001	R 8 800,80

**price indicative

RS stock no.:: 145-9494
Mfr. Part No.:: IRFS3806TRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF

This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits

• High continuous drain current capability of up to 43A
• Efficient operation with a maximum drain-source voltage of 60V
• Low on-resistance reduces power loss
• High-temperature application suitability with a range up to +175°C
• Space-saving surface mount design
• Enhanced ruggedness against dynamic stress for consistent performance

Applications

• Ideal for high-speed power switching scenarios
• Used in uninterruptible power supply systems
• Applicable in synchronous rectification within switched-mode power supplies
• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?

Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?

The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?

Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into compact electronic devices.

What factors should be considered when using the MOSFET in high-temperature applications?

When operating at high temperatures, ensure adequate thermal management is implemented to respect the maximum operating temperature limit of +175°C for reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	43 A
Maximum Drain Source Voltage	60 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	15.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	71 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Typical Gate Charge @ Vgs	22 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Height	4.83mm
Minimum Operating Temperature	-55 °C