Nexperia BUK9Y2940E N-Channel MOSFET, 25 A, 40 V Enhancement, 5-Pin LFPAK BUK9Y29-40E,115
- RS stock no.:
- 153-2923
- Mfr. Part No.:
- BUK9Y29-40E,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 246,90
(exc. VAT)
R 283,925
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 9.876 | R 246.90 |
| 125 - 225 | R 9.629 | R 240.73 |
| 250 - 600 | R 9.34 | R 233.50 |
| 625 - 1225 | R 8.966 | R 224.15 |
| 1250 + | R 8.608 | R 215.20 |
*price indicative
- RS stock no.:
- 153-2923
- Mfr. Part No.:
- BUK9Y29-40E,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | BUK9Y2940E | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 58.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 15V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 4.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series BUK9Y2940E | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 58.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 15V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 5mm | ||
Width 4.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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