Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

RS stock no.:: 152-8344
Mfr. Part No.:: PMDXB950UPELZ
Manufacturer:: Nexperia

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

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Bulk discount available

Subtotal (1 pack of 25 units)*

R 140,60

(exc. VAT)

R 161,70

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

7,075 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 100	R 5.624	R 140.60
125 - 1225	R 5.484	R 137.10
1250 - 2475	R 5.319	R 132.98
2500 - 3725	R 5.106	R 127.65
3750 +	R 4.902	R 122.55

*price indicative

RS stock no.:: 152-8344
Mfr. Part No.:: PMDXB950UPELZ
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type P
	Product Type	Trench MOSFET
	Maximum Continuous Drain Current Id	500mA
	Maximum Drain Source Voltage Vds	-20V
	Package Type	DFN
	Series	Trench MOSFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4025mW
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	1.19nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Height	0.36mm
	Width	1.05 mm
	Standards/Approvals	No
	Length	1.15mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Nexperia
	Channel Type Type P
	Product Type Trench MOSFET
	Maximum Continuous Drain Current Id 500mA
	Maximum Drain Source Voltage Vds -20V
	Package Type DFN
	Series Trench MOSFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4025mW
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 1.19nC
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Height 0.36mm
	Width 1.05 mm
	Standards/Approvals No
	Length 1.15mm
	Number of Elements per Chip 2
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 1.02 Ω

Relay driver

High-speed line driver

High-side load switch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

FREE delivery for orders over R 1,500.00

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