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Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX

RS stock no.:: 151-3200
Mfr. Part No.:: PMPB215ENEAX
Manufacturer:: Nexperia

Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 178,975

(exc. VAT)

R 205,825

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 13 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 225	R 7.159	R 178.98
250 - 600	R 6.98	R 174.50
625 - 1225	R 6.771	R 169.28
1250 - 2475	R 6.50	R 162.50
2500 +	R 6.24	R 156.00

*price indicative

RS stock no.:: 151-3200
Mfr. Part No.:: PMPB215ENEAX
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.8A
	Maximum Drain Source Voltage Vds	80V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	445mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	15.6W
	Typical Gate Charge Qg @ Vgs	4.8nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.1mm
	Width	2.1 mm
	Height	0.65mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.8A
	Maximum Drain Source Voltage Vds 80V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 445mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 15.6W
	Typical Gate Charge Qg @ Vgs 4.8nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.1mm
	Width 2.1 mm
	Height 0.65mm
	Automotive Standard AEC-Q101

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX

FREE delivery for orders over R 1,500.00

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