Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

RS stock no.:: 151-3178
Mfr. Part No.:: PMDXB600UNEZ
Manufacturer:: Nexperia

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

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Bulk discount available

Subtotal (1 pack of 25 units)*

R 128,975

(exc. VAT)

R 148,325

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 10 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 100	R 5.159	R 128.98
125 - 1225	R 5.03	R 125.75
1250 - 2475	R 4.879	R 121.98
2500 - 3725	R 4.684	R 117.10
3750 +	R 4.497	R 112.43

*price indicative

RS stock no.:: 151-3178
Mfr. Part No.:: PMDXB600UNEZ
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	600mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	4.03W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	0.4nC
	Maximum Operating Temperature	150°C
	Height	0.4mm
	Standards/Approvals	No
	Width	1.05 mm
	Length	1.15mm
	Automotive Standard	No

	Select all
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 600mA
	Maximum Drain Source Voltage Vds 20V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 4.03W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 0.4nC
	Maximum Operating Temperature 150°C
	Height 0.4mm
	Standards/Approvals No
	Width 1.05 mm
	Length 1.15mm
	Automotive Standard No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN PMDXB600UNEZ

FREE delivery for orders over R 1,500.00

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