onsemi PowerTrench Type N-Channel MOSFET, 51 A, 100 V Enhancement, 8-Pin PQFN FDMS86183
- RS stock no.:
- 146-4116
- Mfr. Part No.:
- FDMS86183
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 551,95
(exc. VAT)
R 634,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 22.078 | R 551.95 |
| 100 - 475 | R 21.526 | R 538.15 |
| 500 - 975 | R 20.881 | R 522.03 |
| 1000 - 1475 | R 20.046 | R 501.15 |
| 1500 + | R 19.244 | R 481.10 |
*price indicative
- RS stock no.:
- 146-4116
- Mfr. Part No.:
- FDMS86183
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.85 mm | |
| Height | 1.05mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.85 mm | ||
Height 1.05mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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