onsemi PowerTrench N-Channel MOSFET, 950 mA, 25 V, 6-Pin SOT-363 (SC-70) FDG313N
- RS stock no.:
- 146-2123
- Mfr. Part No.:
- FDG313N
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 reel of 3000 units)*
R 30 645,00
(exc. VAT)
R 35 241,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 10.215 | R 30,645.00 |
*price indicative
- RS stock no.:
- 146-2123
- Mfr. Part No.:
- FDG313N
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 950 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Series | PowerTrench | |
| Package Type | SOT-363 (SC-70) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 760 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 750 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Length | 2mm | |
| Width | 1.25mm | |
| Typical Gate Charge @ Vgs | 1.64 nC @ 4.5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 950 mA | ||
Maximum Drain Source Voltage 25 V | ||
Series PowerTrench | ||
Package Type SOT-363 (SC-70) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 760 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 750 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Length 2mm | ||
Width 1.25mm | ||
Typical Gate Charge @ Vgs 1.64 nC @ 4.5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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