Wolfspeed N-Channel MOSFET, 90 A, 1.2 kV Enhancement, 3-Pin TO-247 C2M0025120D

RS stock no.:: 145-6863
Mfr. Part No.:: C2M0025120D
Manufacturer:: Wolfspeed

Wolfspeed N-Channel MOSFET, 90 A, 1.2 kV Enhancement, 3-Pin TO-247 C2M0025120D

Image representative of range

Subtotal (1 tube of 30 units)*

R 48 208,41

(exc. VAT)

R 55 439,67

(inc. VAT)

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Units	Per unit	Per Tube*
30 +	R 1,606.947	R 48,208.41

*price indicative

RS stock no.:: 145-6863
Mfr. Part No.:: C2M0025120D
Manufacturer:: Wolfspeed

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Wolfspeed
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3.5V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	161nC
	Maximum Power Dissipation Pd	463W
	Maximum Gate Source Voltage Vgs	25V
	Maximum Operating Temperature	150°C
	Height	5.21mm
	Standards/Approvals	No
	Length	16.13mm
	Width	21.1mm
	Automotive Standard	No

	Select all
	Brand Wolfspeed
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3.5V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 161nC
	Maximum Power Dissipation Pd 463W
	Maximum Gate Source Voltage Vgs 25V
	Maximum Operating Temperature 150°C
	Height 5.21mm
	Standards/Approvals No
	Length 16.13mm
	Width 21.1mm
	Automotive Standard No

COO (Country of Origin):: CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

Wolfspeed N-Channel MOSFET, 90 A, 1.2 kV Enhancement, 3-Pin TO-247 C2M0025120D

Wolfspeed Silicon Carbide Power MOSFETs

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