onsemi UniFET Type N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin TO-220F FDPF6N60ZUT

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Subtotal (1 tube of 50 units)*

R 739,10

(exc. VAT)

R 849,95

(inc. VAT)

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50 +R 14.782R 739.10

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RS stock no.:
145-4673
Mfr. Part No.:
FDPF6N60ZUT
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220F

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

33.8W

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

14.5nC

Maximum Operating Temperature

150°C

Length

10.36mm

Standards/Approvals

RoHS

Width

4.9 mm

Height

16.07mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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