Specification

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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	N, P
	Maximum Continuous Drain Current	200 mA, 350 mA
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-363 (SC-88)
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	2.8 Ω, 7.8 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.6V
	Maximum Power Dissipation	990 mW
	Maximum Gate Source Voltage	-8 V, +8 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Width	1.35mm
	Length	2.2mm
	Typical Gate Charge @ Vgs	0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
	Transistor Material	Si
	Forward Diode Voltage	1.2V
	Automotive Standard	AEC-Q101
	Minimum Operating Temperature	-55 °C
	Height	1mm

	Select all
	Brand Nexperia
	Channel Type N, P
	Maximum Continuous Drain Current 200 mA, 350 mA
	Maximum Drain Source Voltage 30 V
	Package Type SOT-363 (SC-88)
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 2.8 Ω, 7.8 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.6V
	Maximum Power Dissipation 990 mW
	Maximum Gate Source Voltage -8 V, +8 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Width 1.35mm
	Length 2.2mm
	Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
	Transistor Material Si
	Forward Diode Voltage 1.2V
	Automotive Standard AEC-Q101
	Minimum Operating Temperature -55 °C
	Height 1mm

COO (Country of Origin):: MY

Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA)

Ultra small 1006 sized SOT883 (SC-101) leadless package
Broad choice of SMD and leaded package options
Wide range of double and single functions
More than 300 different products

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2
AEC-Q101 qualified

Nexperia Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

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