DiodesZetex DMN2056U Type N-Channel MOSFET, 4 A, 20 V Enhancement, 3-Pin SOT-23 DMN2056U-7
- RS stock no.:
- 133-3376
- Mfr. Part No.:
- DMN2056U-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 185,60
(exc. VAT)
R 213,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 50 unit(s) shipping from 29 December 2025
- Plus 87,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | R 3.712 | R 185.60 |
| 500 - 950 | R 3.619 | R 180.95 |
| 1000 - 1950 | R 3.511 | R 175.55 |
| 2000 - 2950 | R 3.37 | R 168.50 |
| 3000 + | R 3.235 | R 161.75 |
*price indicative
- RS stock no.:
- 133-3376
- Mfr. Part No.:
- DMN2056U-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMN2056U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Power Dissipation Pd | 940mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMN2056U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Power Dissipation Pd 940mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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