DiodesZetex DMN3042LFDF N-Channel MOSFET, 7 A, 30 V Enhancement, 6-Pin UDFN DMN3042LFDF-7
- RS stock no.:
- 133-3355
- Mfr. Part No.:
- DMN3042LFDF-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 509,25
(exc. VAT)
R 585,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 10.185 | R 509.25 |
| 250 - 950 | R 9.93 | R 496.50 |
| 1000 - 1950 | R 9.632 | R 481.60 |
| 2000 - 2950 | R 9.247 | R 462.35 |
| 3000 + | R 8.877 | R 443.85 |
*price indicative
- RS stock no.:
- 133-3355
- Mfr. Part No.:
- DMN3042LFDF-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UDFN | |
| Series | DMN3042LFDF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05mm | |
| Standards/Approvals | No | |
| Height | 0.58mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UDFN | ||
Series DMN3042LFDF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Width 2.05mm | ||
Standards/Approvals No | ||
Height 0.58mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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