N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 Infineon IRFH5210TRPBF

RS stock no.:: 130-0977
Mfr. Part No.:: IRFH5210TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 Infineon IRFH5210TRPBF

Image representative of range

7985 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 5)

R 13,664

(exc. VAT)

R 15,714

(inc. VAT)

Units	Per unit	Per Pack*
5 - 45	R 13,664	R 68,32
50 - 95	R 13,322	R 66,61
100 - 495	R 12,922	R 64,61
500 - 995	R 12,406	R 62,03
1000 +	R 11,91	R 59,55

*price indicative

RS stock no.:: 130-0977
Mfr. Part No.:: IRFH5210TRPBF
Manufacturer:: Infineon

IRFH5210PbF, HEXFET Power MOSFET 100V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	PQFN 5 x 6
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	14.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	104 W
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	40 nC @ 10 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	6mm
Length	5mm
Minimum Operating Temperature	-55 °C
Height	0.9mm
Forward Diode Voltage	1.3V

N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 Infineon IRFH5210TRPBF

N-Channel Power MOSFET 100V, Infineon