Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1
- RS stock no.:
- 130-0929
- Mfr. Part No.:
- IPT004N03LATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 145,44
(exc. VAT)
R 167,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8,072 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 72.72 | R 145.44 |
| 10 - 98 | R 70.90 | R 141.80 |
| 100 - 498 | R 68.775 | R 137.55 |
| 500 - 998 | R 66.025 | R 132.05 |
| 1000 + | R 63.385 | R 126.77 |
*price indicative
- RS stock no.:
- 130-0929
- Mfr. Part No.:
- IPT004N03LATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HSOF | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 500μΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 252nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HSOF | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 500μΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 252nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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