P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 Infineon SPP80P06PHXKSA1
- RS stock no.:
- 124-8828
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Manufacturer:
- Infineon
Subtotal (1 tube of 50 units)**
R 2 727 25
(exc. VAT)
R 3 136 35
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Tube** |
---|---|---|
50 - 50 | R 54,545 | R 2 727,25 |
100 - 200 | R 53,181 | R 2 659,05 |
250 + | R 51,586 | R 2 579,30 |
**price indicative
- RS stock no.:
- 124-8828
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TO-220 | |
Series | SIPMOS® | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 23 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 340 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.57mm | |
Typical Gate Charge @ Vgs | 115 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Length | 10.36mm | |
Minimum Operating Temperature | -55 °C | |
Height | 15.95mm | |
Forward Diode Voltage | 1.6V | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series SIPMOS® | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 340 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 115 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 1.6V | ||
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