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    P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 Infineon SPP80P06PHXKSA1

    Bulk discount available

    Subtotal (1 tube of 50 units)**

    R  2 727 25

    (exc. VAT)

    R  3 136 35

    (inc. VAT)

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    1050 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Tube**
    50 - 50R 54,545R 2 727,25
    100 - 200R 53,181R 2 659,05
    250 +R 51,586R 2 579,30

    **price indicative

    RS stock no.:
    124-8828
    Mfr. Part No.:
    SPP80P06PHXKSA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    P

    Maximum Continuous Drain Current

    80 A

    Maximum Drain Source Voltage

    60 V

    Package Type

    TO-220

    Series

    SIPMOS®

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    23 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2.1V

    Maximum Power Dissipation

    340 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Width

    4.57mm

    Typical Gate Charge @ Vgs

    115 nC @ 10 V

    Number of Elements per Chip

    1

    Transistor Material

    Si

    Maximum Operating Temperature

    +175 °C

    Length

    10.36mm

    Minimum Operating Temperature

    -55 °C

    Height

    15.95mm

    Forward Diode Voltage

    1.6V

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