ROHM RUR020N02 Type N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin TSMT RUR020N02TL
- RS stock no.:
- 124-6841
- Mfr. Part No.:
- RUR020N02TL
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 109,85
(exc. VAT)
R 126,325
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 4.394 | R 109.85 |
| 125 - 225 | R 4.284 | R 107.10 |
| 250 - 600 | R 4.156 | R 103.90 |
| 625 - 1225 | R 3.99 | R 99.75 |
| 1250 + | R 3.83 | R 95.75 |
*price indicative
- RS stock no.:
- 124-6841
- Mfr. Part No.:
- RUR020N02TL
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSMT | |
| Series | RUR020N02 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Height | 0.95mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSMT | ||
Series RUR020N02 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Height 0.95mm | ||
Length 3mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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