Fairchild PowerTrench N-Channel MOSFET, 17 A, 60 V, 3-Pin TO-220AB FDP038AN06A0
- RS stock no.:
- 124-1747
- Mfr. Part No.:
- FDP038AN06A0
- Manufacturer:
- Fairchild Semiconductor
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 087,65
(exc. VAT)
R 2 400,80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 41.753 | R 2,087.65 |
| 100 - 200 | R 40.918 | R 2,045.90 |
| 250 - 450 | R 39.69 | R 1,984.50 |
| 500 - 950 | R 38.103 | R 1,905.15 |
| 1000 + | R 36.579 | R 1,828.95 |
*price indicative
- RS stock no.:
- 124-1747
- Mfr. Part No.:
- FDP038AN06A0
- Manufacturer:
- Fairchild Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | PowerTrench | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 96 nC @ 10 V | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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