onsemi QFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 124-1718
- Mfr. Part No.:
- FQD12N20LTM
- Manufacturer:
- onsemi
Image representative of range
Subtotal (1 reel of 2500 units)*
R 15 177,50
(exc. VAT)
R 17 455,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | R 6.071 | R 15,177.50 |
*price indicative
- RS stock no.:
- 124-1718
- Mfr. Part No.:
- FQD12N20LTM
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin DPAK FQD12N20LTM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin SOT-223 FQT4N20LTF
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB19N20LTM
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin TO-220F FQPF10N20C
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin TO-220F FQPF19N20C
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin D2PAK FQB34N20LTM
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin DPAK FQD2N80TM
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin DPAK FQD13N10TM