DiodesZetex DMN6068LK3 Type N-Channel MOSFET, 8.5 A, 60 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 122-0221
- Mfr. Part No.:
- DMN6068LK3-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 9 250,00
(exc. VAT)
R 10 650,00
(inc. VAT)
Add 2500 units to get free delivery
Temporarily out of stock
- Shipping from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 3.70 | R 9,250.00 |
| 5000 - 7500 | R 3.608 | R 9,020.00 |
| 10000 - 22500 | R 3.499 | R 8,747.50 |
| 25000 - 47500 | R 3.359 | R 8,397.50 |
| 50000 + | R 3.225 | R 8,062.50 |
*price indicative
- RS stock no.:
- 122-0221
- Mfr. Part No.:
- DMN6068LK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | DMN6068LK3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 8.49W | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series DMN6068LK3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 8.49W | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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