onsemi Isolated 2 Type N-Channel Small Signal, 250 mA, 30 V Enhancement, 6-Pin SC-88
- RS stock no.:
- 121-6305
- Mfr. Part No.:
- NTJD4001NT1G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionSubtotal (1 reel of 3000 units)*
R 3 777,00
(exc. VAT)
R 4 344,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 21,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.259 | R 3,777.00 |
| 6000 - 9000 | R 1.228 | R 3,684.00 |
| 12000 - 27000 | R 1.191 | R 3,573.00 |
| 30000 - 57000 | R 1.143 | R 3,429.00 |
| 60000 + | R 1.098 | R 3,294.00 |
*price indicative
- RS stock no.:
- 121-6305
- Mfr. Part No.:
- NTJD4001NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 2.72W | |
| Forward Voltage Vf | 0.65V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 2.72W | ||
Forward Voltage Vf 0.65V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N-Channel MOSFET, ON Semiconductor
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