Nexperia 2N7002P Type N-Channel MOSFET, 360 mA, 60 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 103-8114
- Mfr. Part No.:
- 2N7002P,215
- Manufacturer:
- Nexperia
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Subtotal (1 reel of 3000 units)*
R 1 689,00
(exc. VAT)
R 1 941,00
(inc. VAT)
Add 3000 units to get free delivery
In Stock
- Plus 39,000 unit(s) shipping from 16 February 2026
- Plus 201,000 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 0.563 | R 1,689.00 |
| 6000 - 12000 | R 0.549 | R 1,647.00 |
| 15000 - 27000 | R 0.533 | R 1,599.00 |
| 30000 - 57000 | R 0.511 | R 1,533.00 |
| 60000 + | R 0.491 | R 1,473.00 |
*price indicative
- RS stock no.:
- 103-8114
- Mfr. Part No.:
- 2N7002P,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 420mW | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 420mW | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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