STMicroelectronics Single MDmesh 1 Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220FP STF13NM60N
- RS stock no.:
- 103-1999
- Mfr. Part No.:
- STF13NM60N
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
R 1 848,70
(exc. VAT)
R 2 126,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 36.974 | R 1,848.70 |
| 100 - 150 | R 36.05 | R 1,802.50 |
| 200 - 450 | R 34.968 | R 1,748.40 |
| 500 - 950 | R 33.57 | R 1,678.50 |
| 1000 + | R 32.227 | R 1,611.35 |
*price indicative
- RS stock no.:
- 103-1999
- Mfr. Part No.:
- STF13NM60N
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FP | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FP | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
All features
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