DiodesZetex N-Channel MOSFET, 900 mA, 100 V Enhancement, 3-Pin E-Line ZVN4310A
- RS stock no.:
- 841-306
- Mfr. Part No.:
- ZVN4310A
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 218,39
(exc. VAT)
R 251,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 8,855 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 43.678 | R 218.39 |
| 25 - 95 | R 42.586 | R 212.93 |
| 100 - 245 | R 41.308 | R 206.54 |
| 250 - 495 | R 39.656 | R 198.28 |
| 500 + | R 38.07 | R 190.35 |
*price indicative
- RS stock no.:
- 841-306
- Mfr. Part No.:
- ZVN4310A
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 850mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Length | 4.77mm | |
| Width | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 850mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Length 4.77mm | ||
Width 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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