DiodesZetex Type N-Channel MOSFET, 900 mA, 100 V Enhancement, 3-Pin E-Line ZVN4310A
- RS stock no.:
- 841-306
- Mfr. Part No.:
- ZVN4310A
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 86,13
(exc. VAT)
R 99,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 75 unit(s) ready to ship from another location
- Plus 9,375 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 17.226 | R 86.13 |
| 25 - 95 | R 16.796 | R 83.98 |
| 100 - 245 | R 16.292 | R 81.46 |
| 250 - 495 | R 15.64 | R 78.20 |
| 500 + | R 15.014 | R 75.07 |
*price indicative
- RS stock no.:
- 841-306
- Mfr. Part No.:
- ZVN4310A
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 850mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.77mm | |
| Width | 2.41 mm | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 850mW | ||
Maximum Operating Temperature 150°C | ||
Length 4.77mm | ||
Width 2.41 mm | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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