Microchip mSiC N channel-Channel MOSFET, 77 A, 700 V, 4-Pin TO-247 MSC035SMA070B
- RS stock no.:
- 813-818
- Mfr. Part No.:
- MSC035SMA070B
- Manufacturer:
- Microchip
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R 211,84
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R 243,62
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 211.84 |
| 10 - 49 | R 205.52 |
| 50 - 99 | R 199.20 |
| 100 + | R 171.68 |
*price indicative
- RS stock no.:
- 813-818
- Mfr. Part No.:
- MSC035SMA070B
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | mSiC | |
| Mount Type | Screw | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 3.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.31mm | |
| Length | 21.46mm | |
| Height | 5.31mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series mSiC | ||
Mount Type Screw | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 3.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 5.31mm | ||
Length 21.46mm | ||
Height 5.31mm | ||
Automotive Standard AEC-Q101 | ||
The Microchip N Channel mSiC MOSFET designed for high-voltage applications, offering superior performance in power management and efficiency.
AEC-Q101 qualified option available
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperatures of up to 175 °C
Eliminates the need for external freewheeling diodes
