Vishay TrenchFET N channel-Channel Automotive MOSFET, 25 A, 200 V MOSFET, 8-Pin PowerPAK 8 x 8 SQJQ190E-T1_GE3
- RS stock no.:
- 790-426
- Mfr. Part No.:
- SQJQ190E-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 50 units)*
R 3 060,30
(exc. VAT)
R 3 519,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 December 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 450 | R 61.206 | R 3,060.30 |
| 500 - 1200 | R 59.676 | R 2,983.80 |
| 1250 - 4950 | R 57.886 | R 2,894.30 |
| 5000 - 24950 | R 55.57 | R 2,778.50 |
| 25000 + | R 53.348 | R 2,667.40 |
*price indicative
- RS stock no.:
- 790-426
- Mfr. Part No.:
- SQJQ190E-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Automotive MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Automotive MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PowerPAK 8 x 8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay N Channel MOSFET delivers robust performance for automotive applications, designed to handle high current and voltage with efficiency. Its Advanced construction ensures reliability in demanding environments.
Rated for a drain-source voltage of 200V
AEC Q101 qualified for automotive standards
Capable of continuous drain currents up to 95A
Support for a maximum junction temperature of 175°C
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