ROHM N-Channel MOSFET, 3.9 A, 1.7 kV, 7-Pin TO SCT2H12NWBTL1
- RS stock no.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
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View bulk pricing optionsSubtotal (1 tape of 2 units)*
R 126,04
(exc. VAT)
R 144,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 554 unit(s) shipping from 02 November 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | R 63.02 | R 126.04 |
| 20 - 98 | R 61.445 | R 122.89 |
| 100 + | R 59.60 | R 119.20 |
*price indicative
- RS stock no.:
- 780-669
- Mfr. Part No.:
- SCT2H12NWBTL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Package Type | TO | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 0mV | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 15.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Package Type TO | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 0mV | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Width 10.2mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS Compliant | ||
Length 15.5mm | ||
Automotive Standard No | ||
The ROHM Silicon Carbide MOSFET delivers high-performance N-channel switching for high-voltage industrial power management. This Advanced SiC device is engineered for auxiliary power supplies, ensuring superior thermal conductivity and lower switching losses compared to traditional silicon components.
Drain to source voltage of 1700 V
Continuous drain current of 3.9 A
1.15 Ohm typical on-resistance
High power dissipation of 39 W
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