STMicroelectronics G-HEMT P-Channel Transistor, 10 A, 700 V Enhancement, 8-Pin PowerFLAT SGT240R70ILB
- RS stock no.:
- 719-636
- Mfr. Part No.:
- SGT240R70ILB
- Manufacturer:
- STMicroelectronics
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R 28,07
(exc. VAT)
R 32,28
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 28.07 |
| 10 - 24 | R 27.37 |
| 25 - 99 | R 26.55 |
| 100 - 499 | R 25.49 |
| 500 + | R 24.47 |
*price indicative
- RS stock no.:
- 719-636
- Mfr. Part No.:
- SGT240R70ILB
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Transistor | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PowerFLAT | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Gate Source Voltage Vgs | -6, 7V | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Transistor | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PowerFLAT | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Gate Source Voltage Vgs -6, 7V | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 8.1mm | ||
Length 8.1mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 10 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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