DiodesZetex DMG2301L P-Channel MOSFET, -3 A, -20 V Enhancement, 3-Pin SOT-23 DMG2301L-7
- RS stock no.:
- 719-544
- Mfr. Part No.:
- DMG2301L-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 6,75
(exc. VAT)
R 7,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,560 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 21 October 2026
- Plus 9,000 unit(s) shipping from 02 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | R 1.35 | R 6.75 |
| 125 - 495 | R 1.316 | R 6.58 |
| 500 - 2495 | R 1.276 | R 6.38 |
| 2500 + | R 1.224 | R 6.12 |
*price indicative
- RS stock no.:
- 719-544
- Mfr. Part No.:
- DMG2301L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Series | DMG2301L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.55mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Series DMG2301L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.55mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex Robust P-channel enhancement mode MOSFET designed for high-efficiency power management applications. This device is engineered to achieve low on-resistance while ensuring superior switching performance, making it Ideal for use in automotive applications, DC-DC converters, and motor control circuits. With a focus on eco-friendliness, it is halogen and antimony-free, fully compliant with RoHS standards.
Low on resistance for efficient power handling
Fast switching speed optimises performance in power management applications
Continuous drain current rating of -3A ensures robust performance under load conditions
Completely lead-free and meets EU directives for environmentally friendly design
SMatte tin plated terminals ensure good solderability and connection integrity
Lightweight design of approximately 0.008 grams enhances efficiency in Compact devices
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