ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, 40 A, -40 V Enhancement, 8-Pin DFN3333T8LSAB
- RS stock no.:
- 687-463P
- Mfr. Part No.:
- RH7G04CBJFRATCB
- Manufacturer:
- ROHM
Image representative of range
Get a bulk buy discount
Add 50 more to save 2%
View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
R 300,20
(exc. VAT)
R 345,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 20 - 48 | R 15.01 | - |
| 50 - 198 | R 14.56 | 2% |
| 200 - 998 | R 13.98 | 6% |
| 1000 + | R 13.42 | 10% |
*price indicative
- RS stock no.:
- 687-463P
- Mfr. Part No.:
- RH7G04CBJFRATCB
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | DFN3333T8LSAB | |
| Series | RH7G04CBJFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Width | 3.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type DFN3333T8LSAB | ||
Series RH7G04CBJFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Width 3.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.
Features a low on-state resistance of 17.7mΩ for improved efficiency
Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications
Utilises wettable flanks for enhanced solder joint reliability
Offers robust thermal resistance to maintain performance under heavy loads
Operates effectively across a wide temperature range of -55 to +175°C
Includes a 100% avalanche test specification for increased safety
Employed in a variety of applications including ADAS and automotive lighting
Comes with detailed packaging specifications for user-friendly integration