ROHM RQ3P120BKFRA N-Channel Single MOSFETs, 12 A, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB
- RS stock no.:
- 687-380P
- Mfr. Part No.:
- RQ3P120BKFRATCB
- Manufacturer:
- ROHM
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Bulk discount available
View bulk pricing optionsSubtotal 20 units (supplied on a continuous strip)*
R 645,20
(exc. VAT)
R 742,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | R 32.26 |
| 50 - 198 | R 31.29 |
| 200 - 998 | R 30.04 |
| 1000 + | R 28.84 |
*price indicative
- RS stock no.:
- 687-380P
- Mfr. Part No.:
- RQ3P120BKFRATCB
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8AG | |
| Series | RQ3P120BKFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 300mm | |
| Standards/Approvals | RoHS | |
| Height | 900μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8AG | ||
Series RQ3P120BKFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 300mm | ||
Standards/Approvals RoHS | ||
Height 900μm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.
Small high-powered package optimises space on PCBs by 64%
High mounting reliability achieved through innovative terminal and plating treatments
AEC Q101 qualification ensures reliability in automotive applications
Designed to handle a maximum power dissipation of 40W for effective thermal management
Low on-state resistance of 58mΩ enhances efficiency and performance
Robust gate-source voltage tolerance of ±20V expands integration possibilities
Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation
Highly reliable operation across a temperature range of -55 to +150°C