Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 34 332,00

(exc. VAT)

R 39 483,00

(inc. VAT)

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3000 +R 11.444R 34,332.00

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RS stock no.:
653-112
Mfr. Part No.:
SIS5712DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Series

SIS5712DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0555Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

39.1W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Height

1.04mm

Length

3.30mm

Standards/Approvals

Lead (Pb)-Free

Width

3.30 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK 1212-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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