Vishay SQJQ114EL Type N-Channel Single MOSFETs, 136 A, 100 V Enhancement, 4-Pin PowerPAK
- RS stock no.:
- 653-072
- Mfr. Part No.:
- SQJQ114EL-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tape of 1 unit)*
R 38,98
(exc. VAT)
R 44,83
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,799 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 38.98 |
| 10 - 24 | R 38.01 |
| 25 - 99 | R 36.87 |
| 100 - 499 | R 35.40 |
| 500 + | R 33.98 |
*price indicative
- RS stock no.:
- 653-072
- Mfr. Part No.:
- SQJQ114EL-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SQJQ114EL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0055Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 277W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.9mm | |
| Width | 8 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SQJQ114EL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0055Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 277W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.9mm | ||
Width 8 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay Automotive-grade N-channel MOSFET optimized for high-efficiency power switching in harsh environments. It supports up to 100 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Housed in a PowerPAK 8x8L package, it leverages TrenchFET Gen IV technology for superior thermal and electrical performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SQJQ114EL Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK SQJQ114EL-T1_GE3
- Vishay SQJQ140ER Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ190 Type N-Channel Single MOSFETs 100 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ738EP Dual N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ131ELP Type P-Channel Single MOSFETs -30 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ443 Type P-Channel Single MOSFETs -40 V Enhancement, 4-Pin PowerPAK
- Vishay SQJA61EP Type P-Channel Single MOSFETs 60 V Enhancement, 4-Pin PowerPAK
- Vishay SQJ141ELP Type P-Channel Single MOSFETs -40 V Enhancement, 4-Pin PowerPAK