onsemi NVM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NVMFWS004N04XMT1G
- RS stock no.:
- 648-508
- Mfr. Part No.:
- NVMFWS004N04XMT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 10 units)*
R 191,96
(exc. VAT)
R 220,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,500 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 19.196 | R 191.96 |
| 100 - 490 | R 18.716 | R 187.16 |
| 500 - 990 | R 18.155 | R 181.55 |
| 1000 + | R 17.429 | R 174.29 |
*price indicative
- RS stock no.:
- 648-508
- Mfr. Part No.:
- NVMFWS004N04XMT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVM | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Width | 5 mm | |
| Standards/Approvals | PPAP capable, Halogen Free/BFR Free, Pb Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVM | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Width 5 mm | ||
Standards/Approvals PPAP capable, Halogen Free/BFR Free, Pb Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant
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