STMicroelectronics STL MOSFET, 103 A, 40 V, 8-Pin PowerFLAT
- RS stock no.:
- 365-175
- Mfr. Part No.:
- STL100N4LF8
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 21,24
(exc. VAT)
R 24,43
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 21.24 |
| 10 - 99 | R 20.71 |
| 100 - 499 | R 20.09 |
| 500 - 999 | R 19.29 |
| 1000 + | R 18.52 |
*price indicative
- RS stock no.:
- 365-175
- Mfr. Part No.:
- STL100N4LF8
- Manufacturer:
- STMicroelectronics
Specification
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 103A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.85mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | JEDEC | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 103A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.85mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals JEDEC | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is a Advanced STripFET F8 achieve higher switching frequencies than previous technologies, thanks to low device capacitances that minimize dynamic parameters and switching losses. This allows designers to use smaller capacitive and magnetic components in more Compact and cost-effective solutions, while increasing the power density of the final application.
Optimized gate charge for Faster commutation speeds
Higher immunity to spurious turn-on
Lower RDS(on) for higher system efficiency
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