Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- RS stock no.:
- 351-970
- Mfr. Part No.:
- IGC033S101XTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 149,77
(exc. VAT)
R 172,236
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 03 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 74.885 | R 149.77 |
| 20 - 198 | R 73.015 | R 146.03 |
| 200 - 998 | R 70.825 | R 141.65 |
| 1000 - 1998 | R 67.99 | R 135.98 |
| 2000 + | R 65.27 | R 130.54 |
*price indicative
- RS stock no.:
- 351-970
- Mfr. Part No.:
- IGC033S101XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-VSON-6 | |
| Series | IGC033 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 5.5 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-VSON-6 | ||
Series IGC033 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 5.5 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN Transistor is a normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Best in class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
Related links
- Infineon IGC033 GaN P-Channel MOSFET Transistor 100 V, 6-Pin PG-VSON-6 IGC033S10S1XTMA1
- Infineon COOLGAN GaN P-Channel MOSFET 100 V, 6-Pin PG-VSON-6 IGC033S101
- Infineon TLE4972AE35S5XUMA1 PG-VSON-6
- Infineon COOLGAN GaN P-Channel MOSFET 100 V, 6-Pin PG-TSON-6-2 IGC033S10S1
- Infineon P-Channel MOSFET Transistor 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- Infineon P-Channel MOSFET Transistor 3-Pin PG-TO252-3 SPD04P10PLGBTMA1
- Infineon IGLR65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1
