Infineon CoolSiC Type N-Channel MOSFET, 23 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1
- RS stock no.:
- 349-345
- Mfr. Part No.:
- IMZA75R090M1HXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 156,97
(exc. VAT)
R 180,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 240 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 156.97 |
| 10 - 99 | R 153.05 |
| 100 - 499 | R 148.46 |
| 500 - 999 | R 142.52 |
| 1000 + | R 136.82 |
*price indicative
- RS stock no.:
- 349-345
- Mfr. Part No.:
- IMZA75R090M1HXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
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