Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- RS stock no.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 182,66
(exc. VAT)
R 210,06
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,000 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 91.33 | R 182.66 |
| 20 - 198 | R 89.045 | R 178.09 |
| 200 - 998 | R 86.375 | R 172.75 |
| 1000 - 1998 | R 82.92 | R 165.84 |
| 2000 + | R 79.605 | R 159.21 |
*price indicative
- RS stock no.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 622mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 4.5mm | |
| Length | 15mm | |
| Width | 10.2 mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 622mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Operating Temperature 200°C | ||
Height 4.5mm | ||
Length 15mm | ||
Width 10.2 mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Related links
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R050M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R026M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R012M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R017M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 650 V, 7-Pin PG-TO263-7 IMBG65R015M2HXTMA1