Infineon IMB Type N-Channel MOSFET, 21.2 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1
- RS stock no.:
- 349-104
- Mfr. Part No.:
- IMBG120R116M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 258,02
(exc. VAT)
R 296,72
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 129.01 | R 258.02 |
| 20 - 198 | R 125.785 | R 251.57 |
| 200 + | R 122.01 | R 244.02 |
*price indicative
- RS stock no.:
- 349-104
- Mfr. Part No.:
- IMBG120R116M2HXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21.2A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 307mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 123W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2 mm | |
| Length | 15mm | |
| Height | 4.5mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21.2A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 307mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 123W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.2 mm | ||
Length 15mm | ||
Height 4.5mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Related links
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R026M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1
- Infineon IMB SiC N-Channel MOSFET 1200 V, 7-Pin PG-TO263-7 IMBG120R012M2HXTMA1