STMicroelectronics STL Type N-Channel MOSFET, 290 A, 40 V, 8-Pin PowerFLAT STL300N4F8
- RS stock no.:
- 330-571
- Mfr. Part No.:
- STL300N4F8
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 44,29
(exc. VAT)
R 50,93
(inc. VAT)
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In Stock
- Plus 2,980 unit(s) shipping from 11 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 44.29 |
| 10 - 99 | R 43.18 |
| 100 - 499 | R 41.88 |
| 500 - 999 | R 40.20 |
| 1000 + | R 38.59 |
*price indicative
- RS stock no.:
- 330-571
- Mfr. Part No.:
- STL300N4F8
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 6mm | ||
Automotive Standard No | ||
Exempt
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology, featuring an enhanced trench gate structure. It delivers a state-of-the-art figure of merit with very low on-state resistance, reduced internal capacitances, and gate charge, enabling faster and more efficient switching.
100% avalanche tested
Low gate charge Qg
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