STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 40 V Enhancement, 10-Pin PowerSO-10RF PD55003TR-E

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R 219,64

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R 252,59

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1 - 9R 219.64
10 - 99R 214.15
100 - 499R 207.73
500 - 999R 199.42
1000 +R 191.44

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Packaging Options:
RS stock no.:
330-270
Mfr. Part No.:
PD55003TR-E
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

40V

Series

PD5

Package Type

PowerSO-10RF

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

0.75Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

65°C

Maximum Power Dissipation Pd

31.7W

Maximum Operating Temperature

165°C

Width

9.6 mm

Height

3.6mm

Standards/Approvals

ECOPACK, JEDEC-approved, J-STD-020B, RoHS

Length

15.65mm

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFET and It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios.

Excellent thermal stability

Common source configuration

POUT 3 W with 17dB gain at the rate 500 MHz or 12.5 V

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