Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- RS stock no.:
- 284-786
- Mfr. Part No.:
- ISC16DP15LMATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 324,33
(exc. VAT)
R 372,98
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 64.866 | R 324.33 |
| 50 - 95 | R 63.244 | R 316.22 |
| 100 - 495 | R 61.346 | R 306.73 |
| 500 - 995 | R 58.892 | R 294.46 |
| 1000 + | R 56.536 | R 282.68 |
*price indicative
- RS stock no.:
- 284-786
- Mfr. Part No.:
- ISC16DP15LMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -22A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS Power Transistor | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -22A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS Power Transistor | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS Power Transistor is designed to deliver exceptional performance for a range of industrial applications. With its Advanced P channel architecture and robust construction, it ensures reliability even under demanding conditions. Boasting a breakdown voltage of 150 V, this transistor is engineered to handle significant voltages effectively. Its low on resistance helps improve efficiency, making it a valuable component in power management systems. By aligning with RoHS compliance standards, this transistor further emphasises its commitment to environmental sustainability, making it an excellent choice for forward thinking projects.
Very low on resistance for efficiency
100% avalanche tested for reliability
Logic level gate drive compatibility
Excellent thermal performance reduces heat
RoHS compliant for eco friendliness
Qualified per JEDEC standards for reliability
Compact design for adaptable configurations
Halogen free lead plating for environmental safety
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