Infineon 600V CoolMOS Type N-Channel MOSFET, 149 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1

RS stock no.:: 284-735
Mfr. Part No.:: IPDQ60R015CFD7XTMA1
Manufacturer:: Infineon

Infineon 600V CoolMOS Type N-Channel MOSFET, 149 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1

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Subtotal (1 unit)*

R 613,78

(exc. VAT)

R 705,85

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

95 unit(s) ready to ship from another location

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Units	Per unit
1 - 9	R 613.78
10 - 99	R 598.44
100 +	R 580.49

*price indicative

RS stock no.:: 284-735
Mfr. Part No.:: IPDQ60R015CFD7XTMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	149A
	Maximum Drain Source Voltage Vds	600V
	Series	600V CoolMOS
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	251nC
	Maximum Power Dissipation Pd	657W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 149A
	Maximum Drain Source Voltage Vds 600V
	Series 600V CoolMOS
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 251nC
	Maximum Power Dissipation Pd 657W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IPDQ60R015CFD7XTMA1

The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor is engineered to excel in high voltage power applications, delivering unparalleled efficiency and reliability. Utilising Advanced super junction technology, this product offers a seamless upgrade over its predecessor, the CFD2 series. With a design focused on soft switching applications such as phase shift full bridge converters and LLC circuits, it ensures optimal performance. Enhanced features like reduced gate charge and minimal reverse recovery charge make this transistor a go to solution for modern energy systems. Its Compact PG HDSOP 22 package guarantees easy integration into existing designs, maximising power density while minimising installation complexity. The CoolMOS CFD7 is also fully compliant with JEDEC standards for industrial applications, ensuring long term stability and reliability in demanding environments.

Optimised for soft switching topologies

Ultra fast body diode for high speed switching

Integrated thermal management extends longevity

Tailored for resonant topologies boosting efficiency

Compact design simplifies PCB mounting

Maximises power density for space constraints

Robust commutation ensures reliable operation

Enhances reliability standards for industrial use

Infineon 600V CoolMOS Type N-Channel MOSFET, 149 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1

FREE delivery for orders over R 1,500.00

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