Infineon XHP Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
- RS stock no.:
- 277-194
- Mfr. Part No.:
- FF2000UXTR33T2M1BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
R 165 593,86
(exc. VAT)
R 190 432,94
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 + | R 165,593.86 |
*price indicative
- RS stock no.:
- 277-194
- Mfr. Part No.:
- FF2000UXTR33T2M1BPSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current | 925 A | |
| Maximum Drain Source Voltage | 3300 V | |
| Package Type | Tray | |
| Series | XHP | |
| Mounting Type | Screw Mount | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current 925 A | ||
Maximum Drain Source Voltage 3300 V | ||
Package Type Tray | ||
Series XHP | ||
Mounting Type Screw Mount | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- DE
The Infineon XHP 2 CoolSiC MOSFET half bridge module 3.3 kV, 1.9 mΩ with XT interconnection technology for decarbonizing transportation.
Integrated body diode
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
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