onsemi NXH Type N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- RS stock no.:
- 277-063
- Mfr. Part No.:
- FDMS8333LN
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 129,91
(exc. VAT)
R 149,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 12.991 | R 129.91 |
| 100 - 240 | R 12.666 | R 126.66 |
| 250 - 490 | R 12.286 | R 122.86 |
| 500 - 990 | R 11.795 | R 117.95 |
| 1000 + | R 11.323 | R 113.23 |
*price indicative
- RS stock no.:
- 277-063
- Mfr. Part No.:
- FDMS8333LN
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NXH | |
| Package Type | Power 56 | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Height | 1.1mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NXH | ||
Package Type Power 56 | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Height 1.1mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
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