ROHM RF9 Type N-Channel MOSFET, 12 A, 40 V Enhancement, 7-Pin DFN RF9G120BKFRATCR
- RS stock no.:
- 265-421
- Mfr. Part No.:
- RF9G120BKFRATCR
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 162,54
(exc. VAT)
R 186,92
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 16.254 | R 162.54 |
| 100 - 240 | R 15.848 | R 158.48 |
| 250 - 490 | R 15.373 | R 153.73 |
| 500 - 990 | R 14.758 | R 147.58 |
| 1000 + | R 14.168 | R 141.68 |
*price indicative
- RS stock no.:
- 265-421
- Mfr. Part No.:
- RF9G120BKFRATCR
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | RF9 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 23W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series RF9 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 23W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified, making it an excellent choice for Advanced Driver Assistance Systems, infotainment, lighting, and body applications. Its robust design ensures reliable performance in critical automotive environments.
Pb free lead plating
RoHS compliant
High power small mould package
Low on resistance
WettableFlank
Related links
- ROHM RF9 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN RF9G120BJFRATCR
- ROHM RF9 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN RF9L120BJFRATCR
- ROHM Dual 2 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN UT6JB5TCR
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- ROHM BM2P Type N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P13A1J-Z
- ROHM BM2P Type N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P06A3J-Z
- ROHM BM2P Type N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P13A3J-Z
- ROHM BM2P Type N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P10A3J-Z